Cryogenic Investigation of Current Collapse in AlGaN/GaN HFETS
نویسندگان
چکیده
Current collapse in AlGaN/GaN HFETs is investigated at low temperatures using a transient current monitoring technique. The carrier trapping and detrapping mechanisms are studied, and two distinct relaxation mechanisms are observed. They are associated to the presence of two close deep energy levels in the bandgap.
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